Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas

B. Shojaei,1 P. J. J. O’Malley,2 J. Shabani,3 P. Roushan,2 B. D. Schultz,4 R. M. Lutchyn,5 C. Nayak,5 J. M. Martinis,2 and C. J. Palmstrøm1,3,4,* 1Materials Department, University of California, Santa Barbara, California 93106, USA 2Department of Physics, University of California, Santa Barbara, California 93106, USA 3California NanoSystems Institute, University of California, Santa Barbara, California 93106, USA 4Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA 5Microsoft Research, Station Q, University of California, Santa Barbara, California 93106, USA (Received 2 December 2015; published 1 February 2016)